BLM9D2527-09AMZ Power LDMOS transistor
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ຮຸ່ນ No: BLM9D2527-09AM BLM9D2527-09AMZ
ຍີ່ຫໍ້: AMPLEON
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| Parameter | Specification |
|---|---|
| Frequency Range | 2496 MHz to 2700 MHz (2.496–2.7 GHz), covering 5G NR n78/n79 and other key bands |
| Peak Output Power (P3dB) | 9 W (Typical, 39.5 dBm), in Doherty Configuration |
| Typical Power Gain | 26.5 dB (Typical, 2-stage amplification) |
| Typical Drain Efficiency | 45%+ (Doherty Configuration, Optimized DPD Performance) |
| Supply Voltage (VDS) | 28 V (Standard), Maximum Rated Voltage 40 V |
| Quiescent Drain Current (IDq) | 120 mA (Typical) |
| Package Type | 20-pin LGA (7×7×0.98 mm), Surface Mount, with Exposed Pad (Enhanced Thermal Dissipation) |
| Special Features | Fully integrated Doherty architecture, built-in carrier/peaking devices, input splitter and output combiner, 50-ohm input/output impedance, no additional matching network required |
| Linearity Performance | Optimized for high Peak-to-Average Power Ratio (PAPR) 5G NR signals, excellent ACPR performance after DPD correction |
| Operating Temperature Range | -40°C to +125°C (Maximum Junction Temperature 175°C) |
ຖະແຫຼງການຄວາມເປັນສ່ວນຕົວ: ຄວາມເປັນສ່ວນຕົວຂອງທ່ານມີຄວາມສໍາຄັນຫຼາຍຕໍ່ພວກເຮົາ. ບໍລິສັດຂອງພວກເຮົາສັນຍາວ່າຈະເປີດເຜີຍຂໍ້ມູນສ່ວນຕົວຂອງທ່ານໃຫ້ກັບການອະນຸຍາດທີ່ຊັດເຈນຂອງທ່ານ.
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ຖະແຫຼງການຄວາມເປັນສ່ວນຕົວ: ຄວາມເປັນສ່ວນຕົວຂອງທ່ານມີຄວາມສໍາຄັນຫຼາຍຕໍ່ພວກເຮົາ. ບໍລິສັດຂອງພວກເຮົາສັນຍາວ່າຈະເປີດເຜີຍຂໍ້ມູນສ່ວນຕົວຂອງທ່ານໃຫ້ກັບການອະນຸຍາດທີ່ຊັດເຈນຂອງທ່ານ.