RF MOSFET Transistors BLM9D2327S-50PBG
Get Latest Price| Min ຄໍາສັ່ງ: | 1 |
ຮຸ່ນ No: BLM9D2327S-50PB BLM9D2327S-50PBG
ຍີ່ຫໍ້: AMPLEON
The file is encrypted. Please fill in the following information to continue accessing it
| Parameter | Specification |
|---|---|
| Frequency Range | 2300 MHz ~ 2700 MHz (Fully covers 5G NR n78 core band and 4G mainstream bands) |
| Peak Output Power | 50W Continuous Wave (CW), in Asymmetric Doherty Configuration (47.0dBm typical) |
| Typical Power Gain | 29.0 dB (Doherty operation mode, up to 29.3dB at 2700MHz) |
| Typical Drain Efficiency | 45% (at 8.5dB OBO, 1-carrier LTE 20MHz signal) |
| Supply Voltage | 28V nominal, Maximum Rated Voltage 65V |
| Quiescent Current | 50 mA (carrier path), independent biasing for peaking path (VGSq(peak)=VGSq(carrier)-0.4V) |
| Package Type | SOT502 (OMP-780-16G-1), 16-pin surface mount package with high-efficiency thermal pad |
| Port Characteristics | Internally matched to 50Ω input, 20Ω output pre-match, simplifying external matching design |
| Architecture | Dual-section fully integrated asymmetric Doherty with built-in input splitter, output combiner, carrier and peaking amplifier paths |
| Operating Temperature | -40°C ~ +125°C (Maximum Junction Temperature 200°C) |
| Thermal Resistance | Junction-to-case thermal resistance as low as 3.5 K/W (at PL=6.25W) |
ຖະແຫຼງການຄວາມເປັນສ່ວນຕົວ: ຄວາມເປັນສ່ວນຕົວຂອງທ່ານມີຄວາມສໍາຄັນຫຼາຍຕໍ່ພວກເຮົາ. ບໍລິສັດຂອງພວກເຮົາສັນຍາວ່າຈະເປີດເຜີຍຂໍ້ມູນສ່ວນຕົວຂອງທ່ານໃຫ້ກັບການອະນຸຍາດທີ່ຊັດເຈນຂອງທ່ານ.
ຕື່ມຂໍ້ມູນໃສ່ໃນຂໍ້ມູນເພີ່ມເຕີມເພື່ອໃຫ້ໄດ້ຮັບການສໍາພັດກັບທ່ານໄວຂື້ນ
ຖະແຫຼງການຄວາມເປັນສ່ວນຕົວ: ຄວາມເປັນສ່ວນຕົວຂອງທ່ານມີຄວາມສໍາຄັນຫຼາຍຕໍ່ພວກເຮົາ. ບໍລິສັດຂອງພວກເຮົາສັນຍາວ່າຈະເປີດເຜີຍຂໍ້ມູນສ່ວນຕົວຂອງທ່ານໃຫ້ກັບການອະນຸຍາດທີ່ຊັດເຈນຂອງທ່ານ.