BLF0910H9LS750PU BLF0910H9LS750PY RF MOSFET LDMOS
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ຮຸ່ນ No: BLF0910H9LS750PU BLF0910H9LS750PY
ຍີ່ຫໍ້: AMPLEON
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| Parameter | Specification |
|---|---|
| Frequency Range | 423 MHz ~ 443 MHz (Precisely covers core ISM band frequencies, suitable for 433MHz wireless communication and industrial heating applications) |
| Output Power | 500W (CW/pulsed CW mode, at 50V supply, 433MHz, Class AB bias) |
| Output Power at 1dB Compression | 57dBm (500W CW, at 50V supply, 433MHz) |
| Typical Power Gain | 25.3 dB (CW mode, at 50V supply, 433MHz), 25.6 dB (pulsed CW mode, at 50V supply, 433MHz) |
| Typical Drain Efficiency | 75% (CW mode, at 50V supply, 433MHz), 75.8% (pulsed CW mode, at 50V supply, 433MHz) |
| Supply Voltage | 50V nominal, Maximum Rated Drain-Source Breakdown Voltage 108V |
| Quiescent Current | 480 mA (Class AB bias, at 50V supply) |
| Package Type | OMP-780-4F-1 (plastic heatsink small outline package), dimensions 20.75mm×9.96mm×4mm, lightweight design with excellent thermal performance |
| Port Characteristics | Internally matched to 50Ω input and output, simplifying RF PCB design and reducing external component count |
| Architecture | Push-pull configuration with integrated ESD protection, achieving excellent off-state isolation performance and thermal stability |
| Operating Temperature | -40°C ~ +150°C (Maximum Junction Temperature 225°C), meeting industrial environment application requirements |
| Thermal Resistance | Junction-to-case thermal resistance as low as 0.25 K/W (typical value, under CW operating conditions) |
| Load Mismatch Tolerance | Capable of withstanding VSWR=10:1 through all phases (at 50V supply, 433MHz, CW/pulsed signal), industrial-grade robustness design |
| Threshold Voltage | 2.0V ~ 3.0V (typical value 2.5V), suitable for wide-range bias circuit design |
| Drain Leakage Current | 3.5μA (typical value, at VDS=50V, VGS=0V), low power standby design |
| ESD Protection | Integrated ESD protection circuit, CDM/MM test levels meet industrial standards, enhancing device reliability during production and application |
| Stability | Unconditionally stable across the entire band, Rollett stability factor K>1 (at -40°C, 0.1GHz to 1GHz frequency range), ensuring no self-oscillation risk |
ຖະແຫຼງການຄວາມເປັນສ່ວນຕົວ: ຄວາມເປັນສ່ວນຕົວຂອງທ່ານມີຄວາມສໍາຄັນຫຼາຍຕໍ່ພວກເຮົາ. ບໍລິສັດຂອງພວກເຮົາສັນຍາວ່າຈະເປີດເຜີຍຂໍ້ມູນສ່ວນຕົວຂອງທ່ານໃຫ້ກັບການອະນຸຍາດທີ່ຊັດເຈນຂອງທ່ານ.
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ຖະແຫຼງການຄວາມເປັນສ່ວນຕົວ: ຄວາມເປັນສ່ວນຕົວຂອງທ່ານມີຄວາມສໍາຄັນຫຼາຍຕໍ່ພວກເຮົາ. ບໍລິສັດຂອງພວກເຮົາສັນຍາວ່າຈະເປີດເຜີຍຂໍ້ມູນສ່ວນຕົວຂອງທ່ານໃຫ້ກັບການອະນຸຍາດທີ່ຊັດເຈນຂອງທ່ານ.