Shenzhen Tongxinke Electronic Technology Co., Ltd.
ຮຸ່ນ No: BLF0910H9LS600 BLF0910H9LS600U BLF0910H9LS600J
ຍີ່ຫໍ້: Ampleon
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| Parameter | Specification |
|---|---|
| Frequency Range | 902 MHz ~ 928 MHz (Precisely covers core ISM band frequencies, suitable for 915MHz industrial heating, wireless communication and professional cooking applications) |
| Output Power | 600W (CW mode, at 50V supply, 915MHz, Class AB bias), 650W (pulsed mode, at 50V supply, 915MHz)Ampleon |
| Output Power at 1dB Compression | 57.8dBm (600W CW, at 50V supply, 915MHz) |
| Typical Power Gain | 19.8 dB (CW mode, at 50V supply, 915MHz), >19 dB (at 600W output) |
| Typical Drain Efficiency | 68.5% (CW mode, at 50V supply, 915MHz), >66% (at 600W output) |
| Supply Voltage | 50V nominal, Maximum Rated Drain-Source Breakdown Voltage 108VAmpleon |
| Quiescent Current | 90 mA (Class AB bias, at 50V supply, total IDq) |
| Package Type | SOT502B (high-performance ceramic package), compact size with excellent thermal performance, suitable for high power continuous wave applications |
| Port Characteristics | External matching required for input/output, providing flexible impedance matching design space to meet different system requirements |
| Architecture | Single-ended common source configuration with integrated ESD protection, achieving excellent off-state isolation performance and thermal stability |
| Operating Temperature | -65°C ~ +150°C (Maximum Junction Temperature 225°C), meeting industrial extreme environment application requirements |
| Thermal Resistance | Junction-to-case thermal resistance as low as 0.25 K/W (typical value, under CW operating conditions) |
| Load Mismatch Tolerance | Capable of withstanding VSWR=10:1 through all phases (at 50V supply, 915MHz, CW/pulsed signal), industrial-grade robustness design |
| Threshold Voltage | 1.73V (typical value, total IDq=90mA), suitable for wide-range bias circuit design |
| Drain Leakage Current | 2.8μA (typical value, at VDS=50V, VGS=0V), low power standby designAmpleon |
| ESD Protection | Integrated ESD protection circuit, CDM/MM test levels meet industrial standards, enhancing device reliability during production and application |
| Stability | Unconditionally stable across the entire band, Rollett stability factor K>1, ensuring no self-oscillation risk |
ຖະແຫຼງການຄວາມເປັນສ່ວນຕົວ: ຄວາມເປັນສ່ວນຕົວຂອງທ່ານມີຄວາມສໍາຄັນຫຼາຍຕໍ່ພວກເຮົາ. ບໍລິສັດຂອງພວກເຮົາສັນຍາວ່າຈະເປີດເຜີຍຂໍ້ມູນສ່ວນຕົວຂອງທ່ານໃຫ້ກັບການອະນຸຍາດທີ່ຊັດເຈນຂອງທ່ານ.
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ຖະແຫຼງການຄວາມເປັນສ່ວນຕົວ: ຄວາມເປັນສ່ວນຕົວຂອງທ່ານມີຄວາມສໍາຄັນຫຼາຍຕໍ່ພວກເຮົາ. ບໍລິສັດຂອງພວກເຮົາສັນຍາວ່າຈະເປີດເຜີຍຂໍ້ມູນສ່ວນຕົວຂອງທ່ານໃຫ້ກັບການອະນຸຍາດທີ່ຊັດເຈນຂອງທ່ານ.
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