RF MOSFET Transistors BLM10D3438-35ABZ
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ຮຸ່ນ No: BLM10D3438-35ABZ BLM10D3438-35AB
ຍີ່ຫໍ້: Ampleon
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| Parameter | Specification |
|---|---|
| Frequency Range | 3400 MHz ~ 3800 MHz (Precisely covers 5G NR n78 core band, compatible with 4G TDD-LTE 3.5GHz mainstream band) |
| Output Power at 1dB Compression | 45.4dBm (35W CW, at 28V supply, 3600MHz, pulsed CW measurement, δ=10%, tp=100μs) |
| Typical Power Gain | 33.4 dB (at 28V supply, 3600MHz, pulsed CW signal), 33 dB (at 26V supply, 37dBm output, 3600MHz, 1-carrier LTE signal) |
| Typical Drain Efficiency | 41% (at PL=37dBm/5W, 1-carrier LTE signal, PAR=7.6dB, 3600MHz) |
| Saturated Drain Efficiency | 47% (at PL=PL(3dB), 3600MHz) |
| Supply Voltage | 26V/28V nominal, Maximum Rated Drain-Source Breakdown Voltage 65V |
| Quiescent Current | 41-42 mA (carrier path), independent biasing for peaking path (VGSq(peak)=VGSq(carrier)-0.5V), supporting flexible bias optimization |
| Package Type | SOT1462-1 (PQFN-8x8-20), 8×8mm leadless thermal enhanced package with exposed thermal pad, 20 terminals, excellent thermal performance design |
| Port Characteristics | Internally pre-matched to 50Ω input and 30Ω output, simplifying RF PCB design and reducing external component count |
| Architecture | 3-stage fully integrated asymmetrical Doherty with built-in input splitter, output combiner, carrier/peaking amplifier paths and driver stages, fully integrated design reduces system complexity |
| Operating Temperature | -40°C ~ +125°C (Maximum Junction Temperature 200°C), meeting industrial environment application requirements |
| Thermal Resistance | Junction-to-case thermal resistance as low as 3.2 K/W (typical value, at PL=5W, 1-carrier W-CDMA signal, PAR=7.6dB) |
| Load Mismatch Tolerance | Capable of withstanding VSWR=10:1 through all phases (at 32V supply, 3800MHz, 1-carrier W-CDMA signal, PAR=9.9dB), industry-leading robustness design |
| Gain Flatness | Only 0.9dB within 3400-3800MHz band, suitable for ultra-broadband communication systems, reducing the need for external equalization circuits |
| Video Bandwidth | 400MHz (at 34.0dBm output power, 2-tone CW signal, IMD3=-25dBc, 3600MHz), supporting ultra-wideband signal transmission, suitable for 5G-Advanced applications |
| ESD Protection | CDM Class C2A (500V), HBM Class 1B (500V), enhancing device reliability during production and application, reducing the risk of electrostatic damage |
| Stability | Rollett stability factor K>1 (at -40°C, 0.1GHz to 6.1GHz frequency range), ensuring stable operation across the entire band without self-oscillation risk |
ຖະແຫຼງການຄວາມເປັນສ່ວນຕົວ: ຄວາມເປັນສ່ວນຕົວຂອງທ່ານມີຄວາມສໍາຄັນຫຼາຍຕໍ່ພວກເຮົາ. ບໍລິສັດຂອງພວກເຮົາສັນຍາວ່າຈະເປີດເຜີຍຂໍ້ມູນສ່ວນຕົວຂອງທ່ານໃຫ້ກັບການອະນຸຍາດທີ່ຊັດເຈນຂອງທ່ານ.
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ຖະແຫຼງການຄວາມເປັນສ່ວນຕົວ: ຄວາມເປັນສ່ວນຕົວຂອງທ່ານມີຄວາມສໍາຄັນຫຼາຍຕໍ່ພວກເຮົາ. ບໍລິສັດຂອງພວກເຮົາສັນຍາວ່າຈະເປີດເຜີຍຂໍ້ມູນສ່ວນຕົວຂອງທ່ານໃຫ້ກັບການອະນຸຍາດທີ່ຊັດເຈນຂອງທ່ານ.