BLM9D3538-12AMZ LDMOS 3-Stage ປະສົມປະສານ Doherty MMIC
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ຮຸ່ນ No: BLM9D3538-12AMZ BLM9D3538-12AM
ຍີ່ຫໍ້: AMPLEON
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| Parameter | Specification |
|---|---|
| Frequency Range | 3400 MHz ~ 3800 MHz (Precisely covers 5G NR n78 core band, compatible with 4G TDD-LTE 3.5GHz mainstream band) |
| Output Power at 1dB Compression | 40.8dBm (12W CW, at 28V supply, 3600MHz, CW measurement) |
| Typical Power Gain | 32.0 dB (at 28V supply, 40dBm output, 3600MHz, CW signal) |
| Typical Drain Efficiency | 30.0% (at PL=3.98W/36dBm, 1-carrier W-CDMA signal, PAR=7.2dB, 3600MHz) |
| Saturated Drain Efficiency | 38% (at PL=PL(1dB), 3600MHz) |
| Supply Voltage | 28V nominal, Maximum Rated Drain-Source Breakdown Voltage 65V |
| Quiescent Current | 80 mA (carrier path), independent biasing for peaking path (VGSq(peak)=VGSq(carrier)-0.5V), supporting flexible bias optimization |
| Package Type | LGA-7x7-20 (PQFN-7x7-20), 7×7mm leadless thermal enhanced package with exposed thermal pad, 20 terminals, excellent thermal performance design |
| Port Characteristics | Internally pre-matched to 50Ω input/output, no external matching components required, simplifying RF PCB design and reducing BOM cost |
| Architecture | 3-stage fully integrated asymmetrical Doherty with built-in input splitter, output combiner, carrier/peaking amplifier paths and driver stages, fully integrated design reduces system complexity |
| Operating Temperature | -40°C ~ +125°C (Maximum Junction Temperature 175°C), meeting industrial environment application requirements |
| Thermal Resistance | Junction-to-case thermal resistance as low as 4.5 K/W (typical value, at PL=12W), efficient heat dissipation ensures long-term stable operation |
| Load Mismatch Tolerance | Capable of withstanding VSWR=6:1 through all phases (at 28V supply, 3400MHz, CW signal), improving system robustness in complex environments |
| Gain Flatness | Only 2.5dB within 3400-3800MHz band, suitable for ultra-broadband communication systems, reducing the need for external equalization circuits |
| ESD Protection | CDM Class C3 (1000V), HBM Class 2 (2000V), enhancing device reliability during production and application, reducing the risk of electrostatic damage |
| Stability | Rollett stability factor K>1 (at -40°C, 0.15GHz to 5GHz frequency range), ensuring stable operation across the entire band without self-oscillation risk |
ຖະແຫຼງການຄວາມເປັນສ່ວນຕົວ: ຄວາມເປັນສ່ວນຕົວຂອງທ່ານມີຄວາມສໍາຄັນຫຼາຍຕໍ່ພວກເຮົາ. ບໍລິສັດຂອງພວກເຮົາສັນຍາວ່າຈະເປີດເຜີຍຂໍ້ມູນສ່ວນຕົວຂອງທ່ານໃຫ້ກັບການອະນຸຍາດທີ່ຊັດເຈນຂອງທ່ານ.
ຕື່ມຂໍ້ມູນໃສ່ໃນຂໍ້ມູນເພີ່ມເຕີມເພື່ອໃຫ້ໄດ້ຮັບການສໍາພັດກັບທ່ານໄວຂື້ນ
ຖະແຫຼງການຄວາມເປັນສ່ວນຕົວ: ຄວາມເປັນສ່ວນຕົວຂອງທ່ານມີຄວາມສໍາຄັນຫຼາຍຕໍ່ພວກເຮົາ. ບໍລິສັດຂອງພວກເຮົາສັນຍາວ່າຈະເປີດເຜີຍຂໍ້ມູນສ່ວນຕົວຂອງທ່ານໃຫ້ກັບການອະນຸຍາດທີ່ຊັດເຈນຂອງທ່ານ.