C4H2327N55PZ RF MOSFET GAN
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ຮຸ່ນ No: C4H2327N55PZ C4H2327N55PX C4H2327N55P
ຍີ່ຫໍ້: AMPLEON
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| Parameter | Specification |
|---|---|
| Frequency Range | 2300 MHz to 2690 MHz (2.3–2.69 GHz), covering 5G NR n41/n78 and other key bands |
| Peak Output Power (P1dB) | 50 W (Typical, in Doherty Configuration) |
| Typical Power Gain | 19.6 dB (Typical) |
| Typical Drain Efficiency | 50%+ (Doherty Configuration, Optimized DPD Performance) |
| Supply Voltage (VDS) | 46–48 V (Typical Application) / 50 V (Standard) |
| Quiescent Drain Current (IDq) | 30 mA (Typical) |
| Package Type | 6-DFN (7×6.5 mm), Surface Mount, with Exposed Pad (Enhanced Thermal Dissipation) |
| Special Features | Doherty architecture, integrated input splitter and output combiner, low output capacitance design |
| Linearity Performance | Optimized for high Peak-to-Average Power Ratio (PAPR) 5G NR signals, excellent ACPR performance after DPD correction |
ຖະແຫຼງການຄວາມເປັນສ່ວນຕົວ: ຄວາມເປັນສ່ວນຕົວຂອງທ່ານມີຄວາມສໍາຄັນຫຼາຍຕໍ່ພວກເຮົາ. ບໍລິສັດຂອງພວກເຮົາສັນຍາວ່າຈະເປີດເຜີຍຂໍ້ມູນສ່ວນຕົວຂອງທ່ານໃຫ້ກັບການອະນຸຍາດທີ່ຊັດເຈນຂອງທ່ານ.
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ຖະແຫຼງການຄວາມເປັນສ່ວນຕົວ: ຄວາມເປັນສ່ວນຕົວຂອງທ່ານມີຄວາມສໍາຄັນຫຼາຍຕໍ່ພວກເຮົາ. ບໍລິສັດຂອງພວກເຮົາສັນຍາວ່າຈະເປີດເຜີຍຂໍ້ມູນສ່ວນຕົວຂອງທ່ານໃຫ້ກັບການອະນຸຍາດທີ່ຊັດເຈນຂອງທ່ານ.